Next generation semiconductor materials and devices (Allen, Alkaisi, Markwitz, Zulicke, Blaikie)
These are rapidly gaining an international profile as highly functional materials with the potential to deliver “next generation” semiconductor devices in UV optoelectronics, transparent electronics for solar cells and displays, high frequency/high temperature power electronics, and in nanoarchitecture due to their dramatic range of spontaneous polarisation induced nanostructures. Our semiconductor fabrication expertise gives us the ability to branch out into device and applications areas, many of which have strong links into other Themes. Persistent photoconductivity phenomena will be studied in macro- and micro-scale optoelectronic devices, with a view to developing passivation techniques to limit this common deleterious effect. Zinc oxide and zinc magnesium oxide will form the basis of this work, given our world-leading development of high-quality rectifying contacts on these material. Field-emission in silicon nanowhisker-based devices will be further investigated using the ion-beam capabilities at GNS Science and the nanofabrication capabilities at UC. Templated growth of nanowhiskers will be attempted, using growth catalyst arrays patterning with self-assembly, interference lithography (see Objective 1 above) or electron-beam lithography techniques. The optical and electrical properties of these ordered nanowhisker arrays will be compared with the self-nucleated nanostructures that we have previously developed, to determine if the additional patterening steps produce superior materials. Devices studies will continue, with the aim of developing more reliable, integrated diodes and transistors. In addition, magnetic ions will be implanted in these nanowhiskers to investigate the effect of spin splitting on field emission.